The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current.
The SPV1001N is a system-in-package solution designed for photovoltaic applications to perform cool bypass rectification. It functions similarly to a conventional Schottky diode but offers significantly lower forward voltage drop and reverse leakage current. The device utilizes a power MOSFET transistor to charge a capacitor during the OFF time and drive its gate during the ON time, optimizing the average voltage drop across the terminals to reduce power dissipation.
| Max DC reverse voltage (SPV1001N30) | 30 V |
|---|---|
| Max forward current | 12.5 A |
| Operating junction temperature | -40 to 150 °C |
| Thermal resistance, junction-to-case | 4 °C/W |
| Package type | PQFN 5 x 6 mm |
The SPV1001N is designed for photovoltaic applications to perform cool bypass rectification.
It features much lower forward voltage drop and reverse leakage current while performing similar cool bypass rectification.