HCF4030B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. It consists of four indipendent exclusive-OR gates integrated on a single monolithic silicon chip. Each exclusive-OR gate consists of four n-channel and four p-channel enhancement-type transistors. All inputs and outputs are protected against electrostatic effects.
The HCF4030B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology. It contains four independent exclusive-OR gates integrated on a single silicon chip, available in DIP and SOP packages. All inputs and outputs are protected against electrostatic effects.
| Technology | Metal Oxide Semiconductor |
|---|---|
| Number of Gates | Four independent exclusive-OR gates |
| Operating Temperature | -55 to 125 °C |
| Package Types | DIP and SOP |
The typical propagation delay time is 65 ns when the supply voltage is 10V.
The maximum quiescent current is 600 µA when the supply voltage is 20V.
The minimum noise margin is 1V when the supply voltage is 5V.