STMicroelectronics STTH2R02-Y Automotive Ultrafast Recovery Diode Datasheet

The document describes the features and characteristics of the STTH2R02-Y automotive ultrafast recovery diode, including very low conduction losses, negligible switching losses, low forward and reverse recovery times, high junction temperature, and AEC-Q101 qualification.


STMicroelectronics STTH2R02-Y Automotive Ultrafast Recovery Diode Datasheet - cover page
Brand
STMicroelectronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
91 KB
Published
09 August, 2012
Updated
28 September, 2023
MD5 checksum
2C9F965B587F948CE4A1B991FB60B6EE

About this manual

This document provides technical specifications and characteristics for the STTH2R02-Y, an ultrafast recovery diode utilizing ST's new 200 V planar Pt doping technology. The device is packaged in SMB and designed for low voltage, high frequency inverters, free wheeling, and polarity protection in automotive applications.

What's inside

  • Features
  • Absolute ratings
  • Static electrical characteristics
  • Dynamic characteristics
  • Ordering information scheme
  • Package information

Specifications

Average forward current (IF(AV))2 A
Repetitive peak reverse voltage (VRRM)200 V
Operating junction temperature range (Tj)-40 to +175 °C
Package typeSMB

Frequently asked questions

What is the maximum junction temperature?

The maximum operating junction temperature (Tj) is +175 °C.

What is the maximum operating junction temperature for this diode?

The device can operate at a maximum junction temperature of 175 °C.

What is the typical reverse recovery time for the STTH2R02-Y?

The typical reverse recovery time is 15 ns.

What is the typical forward voltage drop at 2 A?

The typical forward voltage drop is 0.89 V when the current is 2 A.

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