This document describes the features and characteristics of a 600V power Schottky silicon carbide diode, including no or negligible reverse recovery, temperature-independent switching behavior, etc.
The STPSC2006CW is a 600 V power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. It features an ultrahigh performance Schottky structure with negligible reverse recovery and switching behavior that is independent of temperature. These characteristics make it particularly suitable for PFC boost diode functions in hard switching conditions.
| Repetitive peak reverse voltage | 600 V |
|---|---|
| Maximum operating junction temperature | +175 °C |
Yes, the device exhibits no recovery at turn-off and ringing patterns are negligible.
The device can operate with a maximum junction temperature of +175°C.
The recommended tightening torque is between 0.55 and 1.0 N-m.