STTH3006DPI is a 600V hyperfast recovery diode that is especially suited as a boost diode in continuous mode power factor correctors and hard switching conditions. The device is designed for high dIF/dt operation and features a hyperfast recovery current to compete with SiC devices. This allows downsizing of MOSFETs and heatsinks.
The STTH3006DPI is a Tandem 600V Hyperfast Boost Diode designed for continuous mode power factor correctors and hard switching conditions. It is composed of two 300V dice in series to drastically cut losses in associated MOSFETs when run at high di/dt. The device features internal ceramic insulation, allowing placement on the same heatsink as MOSFETs with equal thermal conditions.
| Average Forward Current | 30 A |
|---|---|
| Repetitive Peak Reverse Voltage | 600 V |
| Maximum Junction Temperature | 150 °C |
| Maximum Forward Voltage | 2.4 V |
| Typical Reverse Recovery Current | 6.7 A |
| Typical Reverse Recovery Time | 25 ns |
| RMS Forward Current | 32 A |
| Surge Non Repetitive Forward Current | 180 A |
| Peak Current | 50 A |
| Junction to Case Thermal Resistance | 13 °C/W |
| Reverse Leakage Current (Typ) | 40 µA |
| Forward Voltage Drop (Typ) | 3.6 V |
| Package Weight | 4.46 g |
The maximum operating junction temperature is +150 °C.
The RMS forward current rating is 32 A.
The typical reverse recovery time is 25 ns.