The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. It is especially suited as a boost diode in continuous mode power factor correctors and hard switching conditions. It is designed for high DI/DT operation and has hyperfast recovery current to compete with SIC devices, allowing downsizing of MOSFET and heatsinks. The internal ceramic insulated devices have equal thermal conditions for both 300V diodes. The insulation (2500VRMS) allows placement on the same heatsink as MOSFET and flexible heatsinking on common or separate heatsinks. The static and dynamic equilibrium of internal diodes are warranted by design. Package capacitance: C=16pF
The STTH1506DPI is an ultra-high performance diode composed of two 300V dice in series. It is specifically designed for high di/dt operation and serves as a boost diode in continuous mode power factor correctors and hard switching conditions. The device features hyperfast recovery current to compete with silicon carbide (SiC) devices, allowing for the downsizing of MOSFETs and heatsinks.
| Reverse voltage (VRRM) | 600 V |
|---|---|
| RMS forward current (IF(RMS)) | 26 A |
| Peak current waveform (Ipeak) | 35 A |
| Storage temperature range (Tstg) | -65 to +150 °C |
| Maximum operating junction temperature (Tj) | +150 °C |
| Reverse recovery time (trr) | 16 ns |
| Reverse recovery current (IRM) | 4.8 A |
| Package capacitance (C) | 16 pF |
The maximum operating junction temperature is +150 °C.
The package weight is 4.46g.
Dimension A ranges from a minimum of 4.4 mm to a maximum of 4.6 mm.