The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. It is especially suited as a boost diode in continuous mode power factor correctors and hard switching conditions. It is designed for high DI/DT operation and has hyperfast recovery current to compete with SIC devices, allowing downsizing of MOSFET and heatsinks. The internal ceramic insulated devices have equal thermal conditions for both 300V diodes. The insulation (2500VRMS) allows placement on the same heatsink as MOSFET and flexible heatsinking on common or separate heatsinks. The static and dynamic equilibrium of internal diodes are warranted by design. Package capacitance: C=16pF