The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high dIF/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of MOSFET and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500VRMS) allows placement on same heatsink as MOSFET. Flexible heatsinking on common or separate heatsink. Static and dynamic equilibrium of internal diodes are warranted by design. Package Capacitance: C=7pF
The STTH506DTI is an ultra-high performance diode composed of two 300V dice in series. It is specifically suited as a boost diode in continuous mode power factor correctors and hard switching conditions, designed to drastically cut losses in associated MOSFETs when run at high dI/dt.
The device features internal ceramic insulation allowing placement on the same heatsink as MOSFETs with equal thermal conditions. It offers static and dynamic equilibrium of internal diodes and includes flexible heatsinking options on common or separate heatsinks.
| Repetitive peak reverse voltage (VRRM) | 600 V |
|---|---|
| RMS forward current (IF(RMS)) | 14 A |
| Surge non repetitive forward current | 60 A |
| Peak current (Ipeak) | 8A |
| Storage temperature range (Tstg) | -65 +150 °C |
| Maximum operating junction temperature (Tj) | + 150 °C |
| Average forward current (IF(AV)) | 5A |
| Junction to case thermal resistance (Rth j-c) | 3.0 °C/W |
| Reverse leakage current at Tj = 25°C | 6µ A |
| Forward voltage drop (VF) at I F = 5A, Tj = 125°C | 3.6 V |
| Reverse recovery time (trr) | 12 ns |
| Package type | TO-220AC |
It is especially suited as a boost diode in continuous mode power factor correctors and hard switching conditions.
The TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI F/dt.
Yes, its insulation (2500V RMS) allows placement on the same heatsink as MOSFETs.
The recommended torque value is 0.8 N.m.