The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high dIF/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of MOSFET and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500VRMS) allows placement on same heatsink as MOSFET. Flexible heatsinking on common or separate heatsink. Static and dynamic equilibrium of internal diodes are warranted by design. Package Capacitance: C=7pF