The document describes the features and characteristics of the 1N5711 small signal Schottky diode. The diode features high breakdown voltage, low turn-on voltage, and ultrafast switching. It is primarily intended for high-level UHF/VHF detection and pulse applications with a broad dynamic range.
This document is a datasheet for the 1N5711 Small Signal Schottky Diode manufactured by STMicroelectronics. The device features a metal-to-silicon junction designed for high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities.
The diode is primarily intended for high-level UHF/VHF detection and pulse applications with a broad dynamic range. It is available in the DO-35 package and can be supplied as matched batches upon request.
| Repetitive Peak Reverse Voltage | 70 V |
|---|---|
| Forward Continuous Current | 15 mA |
| Power Dissipation | 430 mW |
| Storage and Junction Temperature Range | -65 to 200 °C |
| Junction-to-Ambient Thermal Resistance | 400 °C/W |
| Package Type | DO-35 |
It is primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.
Yes, matched batches are available on request.