This document is a product bulletin from the Optoelectronics Division of TRW Electronic Components Group, dated January 1986. It details the specifications for GaAlAs plastic infrared emitting diodes in types OP269SLC, OP269SLB, and OP269SLA.
The devices are molded in end-looking miniature clear packages with integral lenses designed for narrow beam angles. They feature easily stackable anode leads at 0.100 inch centers and are mechanically and spectrally matched to the OP509 phototransistor series.
| Wavelength at peak emission | 876 nm |
|---|
The wavelength at peak emission for this series is 876 nm.
Yes, they are mechanically and spectrally matched to the OP509 phototransistor series.