This application note provides an evaluation of the performance comparison between the SPV100x and two standard Schottky diodes, in order to supply proper guidelines for the correct use of both devices.
The document provides an evaluation of the performance comparison between the SPV100x system-in-package solutions and two standard Schottky diodes. These MOSFET-based devices are designed for use as bypass components in series-connected PV cell strings to prevent hot spots caused by shading.
The note details the operating modes, thermal characteristics, and test results of the devices under various conditions (ambient temperature up to 105°C). It specifically addresses the risk of thermal runaway associated with Schottky diodes and demonstrates how the SPV100x architecture avoids this issue while maintaining low forward voltage drop.
The SPV100x is free from thermal runaway, a phenomenon that can permanently damage standard Schottky diodes in photovoltaic applications.
The SPV1002 differs from the SPV1001 in having a lower Rpgon (on-resistance).