This document mainly introduces Fairchild's chip process optimization solution to eliminate CMOS SCR latch-up problem in 74HC logic.
This document describes the CMOS SCR latch-up phenomenon, a parasitic effect that can cause circuits to malfunction or be destroyed. It details the mechanism involving parasitic P-N-P-N structures within bulk silicon CMOS technologies.
It is a parasitic phenomenon involving a four-layer thyristor structure (P-N-P-N) that appears from V CC to ground, causing the circuit to malfunction.
It is commonly triggered by applying a voltage greater than V CC or less than ground to any input or output, which forward biases the protection diodes.
Fairchild uses proprietary innovations in CMOS processing that reduce transistor betas to eliminate the latch-up mechanism.