This document describes the maximum ratings and electrical characteristics of the 2N7000 N-Channel MOSFET.
This document is a datasheet for the 2N7000 N-Channel MOSFET, a small signal device rated for 200 mAmps and 60 Volts. It is housed in a TO-92 package and is designed for use in various electronic designs and applications. The datasheet provides comprehensive technical data including maximum ratings, thermal characteristics, and electrical specifications.
| Drain Source Voltage | 60 Vdc |
|---|---|
| Drain Current – Continuous | 200 mA |
| Total Power Dissipation | 350 mW |
| Operating Temperature Range | -55 to +150°C |
| Thermal Resistance, Junction to Ambient | 357 °C/W |
| Package Type | TO-92 |
| Gate Threshold Voltage (Min) | 0.8 Vdc |
| Static Drain–Source On–Resistance (Max) | 6.0 Ohm |
The maximum drain source voltage is 60 Vdc.
The continuous drain current rating is 200 mA.
The operating and storage temperature range is from -55 to +150°C.
The device is packaged in a TO-92 case.