This datasheet is part of the APT10078 datasheet, which mainly provides information on static electrical characteristics, maximum ratings, etc.
This document is a datasheet for the Advanced Power APT10078, a low loss, high voltage N-Channel enhancement mode Power MOSFET. It features the Power MOS 7™ technology which combines lower conduction and switching losses with fast switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 14 Amps |
| Total Power Dissipation | 400 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Drain-Source On-State Resistance | 0.78 Ohms |
| Input Capacitance | 2480 pF |
| Reverse Recovery Time | 200 ns |
The device supports a continuous drain current of 14 amps when the junction temperature is 25°C.
The part can dissipate up to 400 watts when the case temperature is maintained at 25°C.
The device operates and stores within a junction temperature range of -55 to 150 °C.