The document introduces the features and characteristics of the single channel optocouplers from MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION, including overall current gain, conventional transistor biasing, rugged package, high gain high voltage transistor, and 1kV electrical isolation. The products can be used for applications such as eliminating ground loops, level shifting, line receivers, switching power supplies, and motor control.
This document is a technical datasheet from Micropac Industries describing the 4N22, 4N23, and 4N24 series of single-channel optocouplers. These devices consist of a Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case.
The datasheet provides absolute maximum ratings, recommended operating conditions, and detailed electrical characteristics for the input diode and output transistor. It includes specific performance data such as on-state collector current, off-state leakage current, rise time, and fall time across various temperature ranges (-55°C to +125°C). Additionally, it offers a selection guide for different screening levels (JAN, JANTX, JANTXV) and graphical curves illustrating the relationship between collector current and collector-emitter voltage.
| Input to Output Electrical Isolation | +1KV |
|---|---|
| Storage Temperature Range | -65°C to +125°C |
| Operating Free-Air Temperature Range | -55°C to +125°C |
| On State Collector Current (4N23) | 0.2 mA |
| On State Collector Current (4N24) | 0.4 mA |
| Collector-Emitter Saturation Voltage (All models) | 0.3 V |
| Rise Time (4N22) | 18 us |
They can be used to eliminate ground loops, perform level shifting, act as line receivers, or in switching power supplies and motor control.
The device can be stored between -65°C and +125°C.
The overall current gain is typically 1.5 for the 4N24 model.