This document introduces the features of the NM93C06LZ series of chips, including 256, 1024, 2048, and 4096 bits of storage capacity. They use CMOS non-volatile electrically erasable memory, divided into 16, 64, 128, 256 16-bit registers. They are manufactured using National Semiconductor’s floating-gate CMOS process for high reliability and low power consumption. These memory devices are available in both SO and TSSOP packages for small space considerations. The serial interface that operates these EEPROMs is MI- CROWIRE compatible for simple interface to standard mi- crocontrollers and microprocessors. There are 7 instruc- tions that control these devices. Read, Erase, Write Enable, Erase, Erase All, Write, Write All, and Erase-Write Disable. The ready-busy status is available on the DO pin to indicate the completion of a programming cycle.
