The U443/U444 N-Channel JFET Monolithic Dual is designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage (< 1pA typical) and low noise this device is an excellent choice for high performance test and measurement, wideband amplifiers and VHF/UHF circuits.
The document describes the U443 Series as an N-Channel Monolithic Dual JFET designed for high-speed amplifier circuits. Key features include high gain (> 6 mS typical), low leakage (< 1pA typical), and low noise performance. These devices are intended for applications such as differential wideband amplifiers, VHF/UHF amplifiers, test and measurement equipment, and multi-chip/hybrid circuits.
The datasheet provides comprehensive technical data including absolute maximum ratings (e.g., Gate-Drain Voltage of -25V), electrical characteristics at 25°C (such as Saturation Drain Current IDss up to 30mA), and dynamic parameters like transconductance. It also includes pin configuration details for the TO-78 package and matching specifications between the dual channels.
| Gate-Source Breakdown Voltage (V(BR)GSS) | -35 to -25 V |
|---|---|
| Saturation Drain Current (IDss) | 6 to 30 mA |
| Common-Source Forward Transconductance (fs) | 4.5 to 9 mS |
| Operating Junction Temperature (Tj) | -55 to 150 °C |
| Power Dissipation (per side) | 367 mW |
They are designed for differential wideband amplifiers, VHF/UHF amplifiers, test and measurement circuits, and multi-chip/hybrids.
The typical common-source forward transconductance (gain) is between 4.5 mS and 9 mS.
The device can operate with a junction temperature ranging from -55°C to +150°C.