The HMN1288J is a nonvolatile static random access memory produced by HANBit Electronics. It uses a 1,048,576-bit static RAM organization of 131,072 bytes by 8 bits. The product also has an in-built lithium energy source that provides reliable non-volatility, coupled with the unlimited write cycles of standard SRAM and integrated control circuitry that constantly monitors the single 5V supply for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time, the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN1288J uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
The HMN1288J is a non‑volatile SRAM module from HANBit, offering 1 Mbit (128 K × 8‑bit) storage in a 34‑pin JLCC package and includes an internal lithium coin cell for data retention when power is lost.
The datasheet provides electrical characteristics such as 55 ns/70 ns access times, a recommended supply voltage of 4.5 V‑5.5 V, standby current as low as 150 pA, and an operating temperature range of –40 °C to 85 °C, together with pin assignments, timing diagrams and package dimensions.
| Memory capacity | 1 Mbit (128 K × 8‑bit) |
|---|---|
| Access time | 55 ns, 70 ns |
| Supply voltage (recommended) | 4.5 V – 5.5 V |
| Standby supply current | 150 pA |
| Data retention (no power) | 10 years minimum |
| Package dimension unit | mm |
| Operating temperature range | -40 °C to 85 °C (industrial) |
| Memory organization | 1,048,576‑bit static RAM, 131,072 bytes × 8 bits |
It provides 1 Mbit (128 K × 8‑bit) static RAM, i.e., 1,048,576 bits of storage.
An internal lithium coin cell powers the SRAM during power‑down, giving at least 10 years of data retention.
The device specifies access times of 55 ns and 70 ns.
Recommended supply voltage is 4.5 V to 5.5 V.