Update: 30 September, 2023
The HMN1288J is a nonvolatile static random access memory produced by HANBit Electronics. It uses a 1,048,576-bit static RAM organization of 131,072 bytes by 8 bits. The product also has an in-built lithium energy source that provides reliable non-volatility, coupled with the unlimited write cycles of standard SRAM and integrated control circuitry that constantly monitors the single 5V supply for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time, the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN1288J uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
File format: PDF
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MD5 Checksum: D8E272A3100F623FAB65E03088324CEF
Publication date: 04 June, 2012
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PDF Link: HANBit HMN1288J Data Sheet PDF