Toshiba TLP176D Photocoupler Datasheet


Toshiba TLP176D Photocoupler Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
246 KB
Published
01 June, 2012
Updated
27 June, 2012
MD5 checksum
7E9C11EDE9BA6A1FAEDD365D707485C1

About this manual

The TLP176D is a GaAs infrared emitting diode optically coupled to a photo‑MOS FET in a SOP‑4 package. It is intended for modem, PBX, and other space‑constrained electronics applications.

The document lists maximum ratings, recommended operating conditions, and detailed electrical characteristics such as forward current, isolation voltage, and switching times, helping designers stay within safe limits.

What's inside

  • Maximum Ratings
  • Recommended Operating Conditions
  • Individual Electrical Characteristics
  • Coupled Electrical Characteristics
  • Isolation Characteristics
  • Switching Characteristics
  • Restrictions on Product Use
  • Schematic Pin Configuration

Specifications

Peak Off‑State Voltage200 V (MIN.)
Trigger LED Current3 mA (MAX.)
On‑State Current200 mA (MAX.)
On‑State Resistance80 Ω (MAX.)
Isolation Voltage1500 V (MIN.)
Forward Current (Ip)50 mA
Reverse Voltage (VR)5 V
Junction Temperature (Tj)125 °C
Supply Voltage (VDD)150‑200 V

Frequently asked questions

What is the maximum off‑state voltage of the TLP176D?

The device is rated for a minimum off‑state voltage of 200 V.

What are the recommended operating temperature limits?

The recommended operating temperature range is –20 °C to 65 °C, with an overall allowable range of –40 °C to 85 °C.

What isolation voltage does the TLP176D provide?

The isolation voltage rating is at least 1500 V.

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