The TLP181 is a miniature optocoupler that combines a gallium‑arsenide infrared emitting diode with a photo‑transistor. It is designed for surface‑mount assembly and offers high isolation and current transfer performance.
The document lists maximum ratings, recommended operating conditions, and detailed electrical characteristics such as forward current, collector‑emitter voltage, isolation voltage, and switching times, helping designers select and use the device safely.
| Collector‑Emitter Voltage (VCEO) | 80 V (Min) |
|---|---|
| Isolation Voltage | > 8750 V (Min) |
| Forward Current (Ip) | 50 mA |
| Pulse Forward Current (Ipp) | 1 A (100 µs pulse) |
| Storage Temperature Range | -55 °C to 125 °C |
| Operating Temperature Range | -55 °C to 100 °C |
| Current Transfer Ratio (CTR) | ≥ 50 % (Min) |
| Rank GB | ≥ 100 % (Min) |
The device is rated for a collector‑emitter voltage of at least 80 V.
It provides an isolation voltage greater than 8750 V (minimum).
The forward current (Ip) is specified as 50 mA.