This document describes the features and characteristics of STMicroelectronics' P80NF55-06 series power MOSFET products, including low on-resistance, exceptional dv/dt capability, 100% avalanche tested, and application-oriented characterization. The product is suitable for high-efficiency DC-DC converters, UPS and motor control, automotive environment, and other applications.
The STB80NF55-06 series is a family of N‑channel Power MOSFETs rated for 55 V drain‑source voltage and up to 80 A continuous drain current. The devices are offered in TO‑220, TO‑220FP, TO‑263 (D2PAK) and other surface‑mount packages, with options for tape‑and‑reel or bulk tube shipment.
The datasheet provides absolute maximum ratings, thermal characteristics, detailed electrical parameters, switching performance, and mechanical dimensions. It also includes typical test circuits, thermal impedance curves, and packaging information needed for design and production.
| Drain‑source Voltage (VDS) | 55 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 80 A |
| Pulsed Drain Current (IDM) | 320 A |
| Total Power Dissipation (PD) | 300 W |
| Maximum Junction Temperature (Tj) | 175 °C |
The device is rated for a maximum drain‑source voltage of 55 V.
It can conduct up to 80 A continuous drain current at 25 °C.