The LS840/LS841/LS842 is a low noise, low drift, low capacitance monolithic dual N-channel JFET from Linear Integrated Systems
The LS840, LS841, and LS842 are monolithic dual N‑channel JFET devices offering low noise (8 nV/√Hz typ.), low leakage (10 pA typ.), low drift (0.9 µV/°C max.) and low offset voltage (2 mV typ.). They are suited for precision analog applications requiring high performance at low capacitance.
The document provides absolute maximum ratings, electrical characteristics, and package dimensions for the devices, including breakdown voltage (60 V), gate‑to‑drain voltage (60 V), and typical transconductance values (1 mS to 4 mS). Package options include TO‑71, TO‑78, and SOIC with detailed mechanical drawings.
| Low Noise | 8 nV/√Hz typ. |
|---|---|
| Low Leakage | 10 pA typ. |
| Low Drift | 0.9 µV/°C max. |
| Low Offset Voltage | 2 mV typ. |
| Gate‑to‑Drain Voltage (Vgs) | 60 V |
| Drain‑to‑Source Voltage (Vds) | 60 V |
| Gate Forward Current (Igf) | 50 mA |
| Maximum Power Dissipation | 31 × 32 mW |
| Breakdown Voltage (BVoss) | 60 V |
| Full‑Conduction Transconductance (Yiss) | 1000 µS typ. |
The typical low‑noise voltage is 8 nV/√Hz.
The devices are rated for a maximum gate‑to‑drain voltage of 60 V.
The typical leakage current is 10 pA.
The breakdown voltage (BVoss) is specified as 60 V.