Intersil HFA3046/HFA3096/HFA3127/HFA3128 Ultra High Frequency Transistor Array Datasheet

The HFA3046, HFA3096, HFA3127, and HFA3128 are Ultra High Frequency Transistor Arrays fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit an fT of 8GHz while the PNP transistors provide an fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high-frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.


Intersil HFA3046/HFA3096/HFA3127/HFA3128 Ultra High Frequency Transistor Array Datasheet - cover page
Brand
Intersil
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
299 KB
Published
11 April, 2012
Updated
29 September, 2023
MD5 checksum
842FDEA9E2FDE119AA8C9BC2E62DB126

About this manual

The HFA3046, HFA3096, HFA3127 and HFA3128 are Ultra High Frequency Transistor Arrays fabricated with Intersil's complementary bipolar UHF‑1 process. Each array contains five dielectrically isolated transistors on a common monolithic substrate, providing close electrical and thermal matching. The NPN devices (HFA3046, HFA3127) reach a transition frequency of 8 GHz, while the PNP devices (HFA3128) reach 5.5 GHz, and the HFA3096 combines NPN and PNP transistors.

Key specifications include low noise (3.5 dB at 1 GHz), collector‑to‑collector leakage below 1 pA, and early voltages of 50 V (NPN) and 20 V (PNP). The arrays are offered in 14‑lead SOIC and 16‑lead QFN packages, are RoHS‑compliant, and are suited for VHF/UHF amplifiers, mixers, IF converters, and synchronous detectors.

What's inside

  • Features
  • Applications
  • Ordering Information
  • Absolute Maximum Ratings
  • Operating Information
  • Thermal Information
  • Electrical Specifications
  • Differential Pair Matching Characteristics
  • Common Emitter S‑Parameters
  • Package Dimensions

Specifications

NPN transition frequency (ft)8 GHz
PNP transition frequency (f7)5.5 GHz
Noise Figure at 1 GHz3.5 dB
Collector‑to‑Collector Leakage<1 pA

Frequently asked questions

What is the maximum collector current for these devices?

The collector current at 100 % duty cycle is 18.5 mA at 150 °C (and lower values at lower temperatures).

Are the HFA transistor arrays RoHS compliant?

Yes, the Pb‑free plus anneal versions are RoHS compliant.

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