The document describes the features and characteristics of the STY30NK90Z N-CHANNEL 900V - 0.21Ω - 26A Max247 Zener-Protected SuperMESH™ MOSFET product, released in January 2005.
This datasheet describes the STY30NK90Z N‑channel 900 V SuperMESH™ MOSFET, highlighting its low on‑resistance, high dv/dt capability, and built‑in gate‑source Zener protection. It includes general features, absolute maximum ratings, thermal data, avalanche characteristics, and detailed electrical parameters.
The document also lists mechanical dimensions, order codes, revision history, and legal disclaimer information. It is intended for designers needing high‑voltage, high‑current switching solutions such as welding equipment.
| Drain‑source voltage (VDS) max | 900 V |
|---|---|
| Continuous drain current at 25 °C (ID) max | 26 A |
| Typical on‑resistance (RDS(on)) | 0.26 Ω |
| Total power dissipation (PD) max | 450 W |
| Package dimension A (length) | 4.70 mm |
The STY30NK90Z can withstand up to 900 V drain‑source voltage.
Its typical on‑resistance is about 0.26 Ω.
The device can continuously conduct up to 26 A at 25 °C.