Stanford Microdevices SPA-1218 1960 MHz 1 Watt Power Amplifier Datasheet

SPA-1218 1960 MHz 1 Watt Power Amp with Active Bias is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.


Stanford Microdevices SPA-1218 1960 MHz 1 Watt Power Amplifier Datasheet - cover page
Brand
STANFORO
Category
Power Amplifier
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
223 KB
Published
05 April, 2012
Updated
30 September, 2023
MD5 checksum
E7333450BCD6EA4226BC3A711048240D

About this manual

The SPA-1218 is a high‑efficiency GaAs HBT power amplifier designed for the 1950‑1990 MHz PCS band. It features on‑chip active bias control, high linearity (+48 dBm OIP3 typical), and a surface‑mountable plastic package, making it suitable for multi‑carrier and digital applications.

The document includes detailed electrical parameters, pin descriptions, absolute maximum ratings, and an evaluation‑board layout. It also provides ordering information, package dimensions, and handling precautions for the exposed‑pad SOIC‑8 package.

What's inside

  • Product Description
  • Product Features
  • Applications
  • Electrical Parameters
  • Pin Description
  • Absolute Maximum Ratings
  • Package Outline
  • Ordering Information
  • Evaluation Board Layout

Specifications

Typical OIP3+48 dBm
Small‑Signal Gain12.0 dB
Input VSWR1.5:1
Supply Current (Iₚ)750 mA
Device Voltage6.0 V
Power Dissipation40 W
RF Input Power+500 mW
Storage Temperature Range-40 to +150 °C

Frequently asked questions

What is the maximum supply current allowed for the device?

The absolute maximum supply current is specified as 750 mA.

What is the typical third‑order intercept point (OIP3) of the amplifier?

The typical OIP3 is +48 dBm.

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