SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC from Stanford Microdevices. It is housed in a low-cost surface mount plastic package and has a Darlington configuration for broadband performance from DC-4.0 GHz. The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 8mA. For broadband applications, it may be biased at 6mA with minimal effect on noise figure and gain. The SLN-186 is available in tape and reel at 1000, 3000 and 5000 devices per reel.
Stanford Microdevices’ SLN-186 is a high‑performance gallium arsenide HBT MMIC LNA housed in a low‑cost surface‑mount plastic package. It operates from DC to 4.0 GHz with a single 3.5 V supply and draws only 8 mA.
The device offers a typical noise figure of 2.0 dB (0.1‑1.5 GHz) and 22 dB gain at 2 GHz. It is supplied in tape‑and‑reel formats of 1 000, 3 000 or 5 000 units and includes absolute maximum ratings such as +200 °C junction temperature and 100 mW RF input power.
| Frequency range | DC‑4.0 GHz |
|---|---|
| Supply voltage | 3.5 V |
| Current draw | 8 mA |
| Noise figure | 2.0 dB (0.1‑1.5 GHz) |
| Gain | 22 dB typ. at 2.0 GHz |
| Input/Output impedance | 50 Ω |
| Package | Surface‑mount plastic |
| RF input power (max) | 100 mW |
The SLN-186 has a noise figure of about 2.0 dB from 0.1 GHz to 1.5 GHz.
It operates from a single 3.5 V supply and draws only 8 mA of current.