The HIP1020 is a single, double, or triple-output hot plug controller that applies a linear voltage ramp to the gates of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to provide the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The internally-controlled rise time meets Device-Bay specifications. If a slower rate is required, it can be overridden using an optional external capacitor. When VCC = 12V, the charge pump ramps the voltage on HGATE from zero to 22V in about 4ms. This allows either a standard or a logic-level MOSFET to become fully enhanced when used as a high-side switch for 12V power control. The voltage on LGATE ramps from zero to 16V, allowing the simultaneous control of 3.3V and/or 5V MOSFETs. When VCC = 5V, the charge pump enters voltage-tripler mode. The voltage on HGATE ramps from zero to 12.5V in about 3ms, while LGATE ramps to 12.0V. This mode is ideal for control of high-side MOSFET switches used in 3.3V and 5V power switching when 12V bias is not available.
The HIP1020 is a single, double or triple‑output hot‑plug controller that applies a linear voltage ramp to the gates of 3.3 V, 5 V and 12 V MOSFETs. It uses an internal charge pump to double a 12 V bias or triple a 5 V bias, delivering the high‑side drive needed for cost‑effective N‑Channel MOSFETs.
Key features include a tiny 5‑pin SOT23 package, internal charge pump, optional external capacitor for slower ramp rates, and built‑in dv/dt‑activated clamp to prevent false turn‑on during hot insertion. Typical applications are Device‑Bay peripherals and any low‑cost load‑switching circuits.
| Package | 5‑Pin SOT23 |
|---|
When VCC is 12 V, the charge pump ramps the HGATE voltage from zero to about 22 V in roughly 4 ms.
A slower ramp rate can be achieved by adding an optional external capacitor to the charge pump.
The shutdown current is less than 1 pA.
The HIP1020 is supplied in a 5‑pin SOT23 package.