The Excelics EFA480C is a low-distortion GaAs power FET with a typical output power of +34.0dBm and a typical power gain of 18.0dB at 2GHz. 0.5 x 4800 microns recessed “mushroom” gate, Si3N4 passivation and plated heat sink, advanced epitaxial doping profile provides high power efficiency, linearity and reliability. Idss sorted in 80mA per bin range.
This data sheet describes the Excelics EFA480C low‑distortion GaAs power FET. It lists typical performance figures such as 34 dBm output power at 2 GHz and 18 dB gain at the same frequency, along with detailed electrical characteristics and maximum rating limits.
The document also includes S‑parameter measurements over a wide frequency range, mechanical dimensions, and contact information for Excelics Semiconductor. Notes warn that exceeding the listed ratings can cause permanent damage or reduced device lifetime. This manual is written in Chinese.
| Continuous Drain‑Source Voltage (Vds) | 12 V |
|---|---|
| Continuous Gate‑Source Voltage (Vgs) | -8 V |
| Total Power Dissipation (max) | 11.4 W |
| Storage Temperature Range | -65 °C to 150 °C |
The device can continuously handle a drain‑source voltage of up to 12 V.
The recommended storage temperature range is –65 °C to 150 °C.