This document describes the features and characteristics of Excelics EFA040A-70 GaAs Power FET, including low distortion, low cost, high power efficiency, linearity, and reliability.
The Excelics EFA480C is a low-distortion GaAs power FET with a typical output power of +34.0dBm and a typical power gain of 18.0dB at 2GHz. 0.5 x 4800 microns recessed “mushroom” gate, Si3N4 passivation and plated heat sink, advanced epitaxial doping profile provides high power efficiency, linearity and reliability. Idss sorted in 80mA per bin range.
