This document describes the features and characteristics of Excelics EFA040A-70 GaAs Power FET, including low distortion, low cost, high power efficiency, linearity, and reliability.
The FEFA040A-70 is a low‑distortion GaAs power FET offered in a non‑hermetic low‑cost ceramic 70 mil package. Typical performance includes 22.0 dBm output power at 12 GHz and 8.0 dB gain at 1 dB compression.
The document lists detailed electrical characteristics such as drain current, transconductance, voltage ratings, and thermal resistance, as well as S‑parameter data over a wide frequency range. Maximum ratings and storage conditions are also provided. This manual is written in Chinese.
| Drain‑Source Voltage (Vds) – Absolute | 10 V |
|---|---|
| Gate‑Source Voltage (Vgs) – Absolute | -6 V |
| Thermal Resistance (Rth) | 250 °C/W |
The absolute maximum drain‑source voltage is 10 V, with a continuous rating of 6 V.
It uses a non‑hermetic low‑cost ceramic 70 mil package.