TOSHIBA Manuals

This document describes the features and characteristics of TLP541G and TLP542G, two Toshiba photocouplers. It includes parameters such as peak off-state voltage, trigger LED current, on-state current, isolation voltage, etc.

TLP627A, TLP627A-2, and TLP627A-4 consist of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor. They have a 350V high voltage of collector-emitter breakdown voltage. TLP627A-2 offers two isolated channels in an eight lead plastic DIP package, while TLP627A-4 provides four isolated channels per package.

TLP628, TLP628−2, TLP628−4 are Toshiba's photocoupler products, consisting of a gallium arsenide infrared emitting diode optically coupled to a phototransistor with a 350V high voltage of collector-emitter breakdown voltage. TLP628−2 offers two isolated channels in an eight-lead plastic DIP package, while TLP628−4 provides four isolated channels in one package of the same type.

This document introduces the features and characteristics of the TLP628, TLP628−2, and TLP628−4. They are photocouplers consisting of a gallium arsenide infrared emitting diode and a phototransistor. These products have a collector-emitter breakdown voltage of up to 350V and a current transfer ratio of over 50%. The TLP628−2 has two isolated channels, while the TLP628−4 has four isolated channels. The packages of these products are eight-lead plastic DIP package and multi-lead package respectively.

The TLP628, −2, and −4 are TOSHIBA photocouplers which use a gallium arsenide infrared emitting diode optically coupled to a phototransistor. The TLP628−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP628−4 provide four isolated channels per package.

TLP629, TLP629-2, TLP629-4 are optical couplers produced by Toshiba. They consist of an infrared emitting diode and a photo-transistor, and are suitable for applications with DC input current up to 150 mA.

TLP629 is a photocoupler produced by Toshiba. It consists of a photodiode and a photosensitive transistor, which can convert light signals into electrical signals. The device has a maximum input current of 150mA, a collector-emitter voltage of 55V, a minimum photoelectric transfer ratio of 25% (IF=20mA), and a maximum isolation voltage of 5000Vrms. It is suitable for applications with an AC input current of up to 150mA.

The product is a photocoupler consisting of a photodiode and a phototransistor, suitable for applications with a maximum DC input current of 150mA.

This is a photocoupler with two emitter diodes and one phototransistor. It is suitable for motor control, AC/DC module and communication.

This product is a photocoupler, which consists of a photo-transistor and two GaAs infrared emitting diodes, which are inverse parallel connected in a six-lead plastic DIP package. It has the characteristics of high isolation voltage, high current transfer ratio and high reliability.

TLP631,TLP632 is a bidirectional silicon photocoupler produced by Toshiba. It consists of an infrared emitting diode and a phototransistor. The former emits near-infrared light and the latter receives infrared light. The two are isolated from each other by an insulating layer, which can meet the requirements of high voltage, high power, high noise and high frequency applications.