MITSUBISHI Manuals

The ML9XX45 series are InGaAsP laser diodes that provide stable, single transverse mode oscillation with an emission wavelength of 1550nm and a standard continuous light output of 5mW. The ML9XX45 is a hermetically sealed device with a photodiode for optical output monitoring. This is suitable for applications such as FTTH (Fiber to the Home) systems.

ML9XX11 series are DFB (Distributed Feedback) laser diodes emitting light beam around 1550nm, well suited for light source in long distance digital transmission system. The series products have wide temperature range operation (-40 to 85ºC), low threshold current (typical 8mA), high speed response (typical 0.1nsec) and φ5.6mm TO-CAN package.

This document describes the features and characteristics of MITSUBISHI LASER DIODES ML7xx45 series products. These products are InGaAsP laser diodes that provide a stable, single transverse mode oscillation with an emission wavelength of 1310nm and a standard continuous light output of 5mW. The ML7XX45 series is suitable for applications such as FTTH and 1Gbps Ethernet/Fiber channel systems.

ML7XX11 series is a DFB laser diode produced by Mitsubishi Electric. It emits light beam around 1310nm and is suitable for light source in long distance digital transmission system.

RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. It features high power and high gain, with Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz in the VHF band, and Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz in the UHF band. It also has high efficiency, with 60%typ. on the VHF band and 55%typ. on the UHF band. It is suitable for the output stage of high power amplifiers in VHF/UHF band mobile radio sets. It is RoHS compliant.

RD70HHF1 is a high power MOSFET type transistor specifically designed for HF High power amplifiers applications. The transistor features high power and high gain (Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz), high efficiency (60%typ.on HF Band) and RoHS compliance.

RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. It features high power and high gain, with a power output greater than 60W and a gain greater than 7.7dB @ Vdd=12.5V, at a frequency of 520MHz. It has high efficiency, with 55%typ. on UHF Band. It is suitable for the output stage of high power amplifiers in UHF Band mobile radio sets.

RD45HMF1 is a MOSFET type transistor specially designed for 900MHz-band High power amplifiers applications. Its features are high power and high gain, output power can reach 45W, gain can reach 4.7dB. It is suitable for the output stage of high power amplifiers in the 800-900MHz Band mobile radio sets.

RD30HVF1 is a MOS FET type transistor from RD company, specially designed for VHF RF power amplifiers applications. It features high power gain, high efficiency and low cost.

RD30HUF1 is a RF Power MOSFET, specifically designed for UHF RF power amplifiers applications, max output power 30W, work frequency 520MHz, high efficiency 55%

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications, with high power gain and high efficiency.

RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF high power amplifiers applications. It features high power, high gain, and high efficiency. Suitable for the output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifier applications. It features high power gain and high efficiency.

RD100HHF1 is a silicon RF Power MOSFET Transistor designed for HF Band mobile radio sets.