MITSUBISHI Manuals

MITSUBISHI RD09MUP2 Manual

RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications, featuring high power gain and high efficiency.

MITSUBISHI RD07MVS2 Manual

RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.

MITSUBISHI RD07MVS1 Manual

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. It has high power gain, high efficiency and RoHS compliance.

MITSUBISHI RD07MUS2B Manual

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

MITSUBISHI RD05MMP1 Manual

RD05MMP1 is a MOSFET type transistor specifically designed for UHF RF power amplifiers applications.

MITSUBISHI RD02MUS2 Manual

RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.

MITSUBISHI RD02MUS1B Manual

RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

MITSUBISHI RD01MUS2 Manual

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.

MITSUBISHI RD01MUS1 Manual

RD01MUS1 is a MOS FET type transistor specially designed for VHF/UHF RF amplifiers applications.

MITSUBISHI RD00HVS1 Manual

RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. It features high power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz.

MITSUBISHI RD00HHS1 Manual

RD00HHS1 is a RF power MOSFET from Rohm, featuring high power gain and low power consumption, it is suitable for HF band power amplifier applications

The RA18H1213G is an 18-watt RF MOSFET Amplifier Module designed for 12.5-volt mobile radios that operate in the 1.24-1.30 GHz range. It features enhancement-mode MOSFET transistors, broadband frequency range, and low-power control current.

MITSUBISHI RA45H7687M1 Manual

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. It features enhancement-mode MOSFET transistors, providing a broadband frequency range, high output power, and high efficiency.

MITSUBISHI RA20H8994M Manual

The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.