NXP Manuals

Planar passivated four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications.

The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using NXP

Planar passivated very sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications where high sensitivity is required in all four quadrants. This "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications.

Planar passivated sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications. This "series E" sensitive gate triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications.

Planar passivated sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications. This "series E" sensitive gate triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.