This page provides manuals, user guides, handbooks, instructions, specification, instruction, maintenance manual for ST Anti-Theft Devices, Electronic Original, ...
STGB20NB37LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, high current capability, and high voltage clamping feature. It is designed using the latest high voltage technology based on patented strip layout, delivering outstanding performances.
STGB20NB32LZ is an N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT produced by ST. It uses the latest high voltage technology, has outstanding performance, and integrates an emitter-gate zener diode and a collector-gate zener diode, respectively providing ESD protection and high-precision active clamping.
This document is the specification of STGD18N40LZ - STGB18N40LZ, which introduces the features and characteristics of the product, including rated voltage, electrical characteristics, test circuits, and package dimensions
STMicroelectronics N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBTs with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short cir- cuit withstand capability.
The STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT is an advanced family of IGBTs with outstanding performances, designed by STMicroelectronics.
STGB10NB37LZ is a N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh IGBT produced by STMicroelectronics. It uses the latest high voltage technology, and has the characteristics of low threshold voltage, low turn-on voltage drop, low gate charge, high current capability and high voltage clamping.
STGB10NB37LZ is a N-channel bipolar transistor launched by SGS-Thomson. It has low threshold voltage, low turn-on voltage drop, high current capacity, high voltage clamping feature, etc. It is used in automotive ignition and other fields.
STGB10N60L is a N-channel IGBT produced by STMicroelectronics. It has a maximum rated voltage of 600 V and a maximum current of 10 A. It is packaged in D2PAK (TO-263) and has the characteristics of high input impedance (voltage driven), very low on-voltage drop (Vcesat), low threshold voltage (logic level input), high current capability, and switching losses including tail current.
STG719 is a low power single supply SPDT CMOS switch from STMicroelectronics. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25oC. Additional key features are fast switching speed (tON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01µW Typ.).
The STG5682 is a low voltage dual SPDT switch from ST company, it has negative rail capacitance, supports voltage from 1.65V to 4.5V, has ultra low power consumption, fast switching speed, ESD protection and transient overvoltage protection.
The STG3699A is a high-speed CMOS low voltage quad analog single pole dual throw (SPDT) switch or 2:1 multiplexer/demultiplexer switch, designed to operate from 1.65V to 4.3V, making it ideal for portable applications. It offers very low ON-Resistance (<0.5Ω) at VCC=3.0V. It features fast switching speed, Break Before Make Delay Time and Ultra Low Power Consumption.
STG3699 is a high performance, low power, high voltage range quad low voltage CMOS SPST switch or 2:1 multiplexer/demultiplexer switch produced by ST company. The operating voltage range of the device is 1.65V to 4.3V, which is very suitable for portable applications.
The STG3690 is a high-performance low-voltage quad analog S.P.D.T. (Single Pole Dual Throw) switch, manufactured in silicon gate C2MOS technology. It offers very low ON-Resistance (<5Ω) at VCC=3.0V.
