2SB1710 is a NPN type medium power transistor produced by Toshiba. It is mainly used in low frequency amplifier and driver circuits. This transistor has a large current gain and a low collector saturation voltage, which can meet the needs of various low frequency amplifiers and driver circuits.
2SB1731 is a low frequency amplifier tube produced by ROHM company. It has the characteristics of large collector current, and its maximum collector current can reach 1A, and the minimum collector-emitter saturation voltage is -370mV. It is suitable for low frequency amplifier and other occasions.
2SB1732 is a NPN type transistor produced by ROHM. It has large collector current and low saturation voltage, and is suitable for low frequency amplifiers and drivers.
2SB1733 is a power amplifier produced by ROHM. This product has low voltage output, large current output and low saturation voltage. It is suitable for low frequency amplifiers and driver circuits.
This document describes the features and characteristics of the medium power transistor 2SA1036K produced by ROHM Co., Ltd. These include large IC, low VCE(sat), and complementarity with 2SC2411K. The transistor is a PNP silicon transistor of epitaxial planar type, suitable for low-voltage operation. The document also provides the absolute maximum ratings and electrical characteristics of the transistor.
This document describes the features and dimensions of several general purpose PNP silicon transistors produced by ROHM. These products have excellent hFE linearity and can be used in conjunction with other models of silicon transistors.
This document describes the features and dimensions of the high-voltage amplifier transistors 2SA1579 / 2SA1514K produced by ROHM, as well as their packaging specifications, electrical characteristics, and absolute maximum ratings.
2SA1576UB is a PNP silicon epitaxial planar transistor produced by ROHM, which is suitable for general small signal amplifiers and has excellent hFE linearity and good complementarity
2SA1577 is a NPN medium power transistor produced by ROHM. Its maximum collector current is -500mA and collector-emitter saturation voltage is -0.6V. The typical current gain is 390.
This document introduces a general purpose transistor from ROHM, model 2SA1774EB. It is primarily used for general purpose small signal amplifiers and features excellent hFE linearity. It complements the 2SC4617EB. The transistor is a PNP silicon epitaxial planar structure with a rated collector-base voltage of 50V and a rated collector current of 0.15A.
