RPI-579N1 photointerrupter, general type, applications for printers, facsimiles, AV equipment. It has the following characteristics: heat resistance (170°C), small gap (0.5mm), good accuracy, fast response time, built-in visible ray filter, kinked forming.
RPI-5100 is a photointerrupter which is applied to optical control equipment, facsimiles and plain paper copiers. It features a compact structure, minimal influence from stray light and an actuator mount.
RPI-1133 is a small photointerrupter, used in optical control equipment. It has the following features: 1. The slit width is less than 0.3mm, ensuring high precision; 2. Fast response; 3. Built-in visible light filter.
This document describes the applications and features of the RPR-220UC30N reflective photosensor, including a plastic lens for high sensitivity, a built-in visible light filter, lightweight and compact design, etc.
RPR-220PC30N is a photosensor. It is used in printers, MFPs, etc. It has the following features: 1. Plastic lens design, high sensitivity; 2. Built-in visible light filter, which minimizes the interference of external light; 3. Small size and light weight.
The RPM-012PB is an ultra-small, high-sensitivity chip sensor that features original technology, original structure, and original optical design that allows it to be used with automatic mounting machines, reflow, and has a ultra-small size and high sensitivity.
RPT-37PB3F is a phototransistor produced by ROHM with high sensitivity and resistance to external stray light interference, suitable for applications such as optical control equipment and sensors.
The RPT-38PB3F is a silicon planar phototransistor with high sensitivity and almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode in optical control equipment and receiver for sensors.
This document describes the features and characteristics of the RPM-20PB phototransistor, including high sensitivity, molded plastic packaging, and side-facing detector.
This document is for RPI-1031 photoelectric sensor, including application scenarios, appearance size, absolute maximum ratings, electrical characteristics, photoelectric characteristics, internal circuit diagram, graphic characteristics and circuit diagram etc.
2SB1260 / 2SB1181 are power transistors produced by ROHM. They have high breakdown voltage and high current, good hFE linearity, low VCE(sat) and other features.
This document describes the features and characteristics of the 2SB1197K low frequency PNP silicon transistor. It includes features such as low VCE(sat) of 0.5V, maximum current of 0.8A, and complementarity with 2SD1781K.
