NEC Manuals

RD2.0MW to RD39MW are 3-PIN Mini Mold Package zener diodes possessing allowable power dissipation of 200 mW. They are suitable for circuits for Constant Voltage, Constant Current, Wavefore clipper, Surge absorber, ESD Protect circuit, etc.

This is a user's guide for a wireless IP telephone. It contains instructions on how to use the product, as well as warnings and precautions.

This data sheet describes the principle, characteristics and application of µPB1005K. This IC is a double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer IC for GPS receiver. This IC uses 36-pin plastic QFN package, fixed prescaler and supply voltage. This IC is manufactured using NEC’s 20GHz fT NESAT TMIII silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution, and prevent corrosion/migration. Thus, this IC realizes excellent performance, uniformity and reliability.

2SK1109 is a N-channel silicon junction field effect transistor for ECM converter from NEC

The 2SA1008 is a PNP silicon epitaxial transistor developed by NEC Corporation for high-speed switching. It is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.