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FDN342P is a high-voltage, low-leakage N-channel MOSFET from Dinghao. The maximum drain-source voltage for this product is -20V, the maximum gate-source voltage is ±12V, and the maximum drain current is -2A. The power dissipation for this product is 0.5W, and the operating temperature range is -55 to +150 degrees Celsius.
This datasheet provides the FDN342P's specification information, including: product model, package type, pin arrangement, maximum working voltage, maximum working current, maximum working power, working temperature range, package size, etc.
FDN352AP is a low-voltage low-side MOSFET produced by Fairchild Semiconductor. It features extremely low on-state resistance and high power handling capability, making it suitable for notebook computer power management applications.
FDN352AP is a low power P-channel logic level MOSFET manufactured by Fairchild Semiconductor. This device is produced using Fairchild Semiconductor's advanced Power Trench process, which provides extremely low on-state resistance and low gate charge for superior switching performance.
This document is about FDN352AP's technical information. The product is a P-channel MOSFET with extremely low R DS(ON) and SOT-23 package. It is suitable for low voltage and battery powered applications
FDN357N is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It uses the industry standard SOT-23 package with excellent thermal and electrical properties and high density cell design. It can provide extremely low RDS(ON).
This document describes the features and characteristics of the FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor, released in March 1998. It includes information about its maximum voltage, maximum power dissipation, operating temperature range, etc.
The document describes the features and characteristics of the March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor, including maximum ratings, operating temperature range, thermal resistance, etc.
FDN359AN N-Channel Logic Level PowerTrench TM MOSFET is a type of N-channel MOSFET produced by Fairchild Semiconductor. It features low on-state resistance and fast switching speed. Suitable for low voltage and battery powered applications where low line loss and fast switching are required.
FDN359AN is a N-channel logic level MOSFET produced by Fairchild Semiconductor. It uses the company's advanced PowerTrench process, which provides low on-resistance and superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET is a logic-level MOSFET produced using Fairchild's advanced PowerTrench process that is specially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDN359BN is an N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. Its maximum rated voltage is 30V and its maximum rated current is 2.7A.
FDN360P is a P-channel logic level MOSFET produced by Fairchild Semiconductor. The device has low on-state resistance and fast switching characteristics, making it suitable for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
The FDN361AN is a N-channel logic level MOSFET produced by Fairchild Semiconductor. It uses the PowerTrench process and has low on-state resistance and low gate charge. It is suitable for applications such as DC/DC converters, load switches, and motor drives.
