Philips Manuals (Industrial)

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BFG505W is a NPN 9GHz wideband transistor produced by Philips Semiconductors. It features high power gain, low noise figure and high transition frequency. It is mainly used for RF front end applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV).

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This document describes the features and characteristics of BFG505W and BFG505W/X NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency.

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This document is the product specification of BFG480W NPN wideband transistor. The product has high power gain, high efficiency, low noise figure, high transition frequency, low feedback capacitance, etc. It is suitable for high linearity system requirements RF front end (CDMA), common emitter class AB driver and other applications.

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This document describes the features of the BFG425W NPN 25 GHz wideband transistor, including very high power gain, low noise figure, high transition frequency, low feedback capacitance, etc. The product is suitable for RF front end, wideband applications, radar detectors, pagers, satellite television tuners, and high frequency oscillators.

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BFG410W is a NPN 22 GHz wideband transistor from Philips Semiconductors. It features very high power gain, low noise figure, high transition frequency and low feedback capacitance. It is widely used in RF front end, wideband applications, radar detectors, pagers, satellite television tuners and high frequency oscillators.

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BFG403W is an NPN 17 GHz wideband transistor with low current, very high power gain, low noise figure, high transition frequency and very low feedback capacitance. It is suitable for applications such as pager front ends, RF front ends, etc.

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This document describes a BFG35 NPN 4 GHz wideband transistor, intended for wideband amplifier applications. It features high output voltage capabilities.

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This document describes an NPN silicon planar epitaxial transistor with features like high power gain, low noise figure, and high transition frequency. The product is intended for RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and Satellite Antenna TeleVision (SATV) tuners.

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BFG31 is a PNP type 5 GHz wideband transistor, features high output voltage capability, high gain bandwidth product and good thermal stability. It is mounted in a plastic SOT223 envelope and intended for wideband amplifier applications. Its NPN complement is the BFG97.

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This document is the product specification of BFG21W UHF power transistor. It introduces the features and characteristics of the product, including high power gain, high efficiency, 1.9 GHz operating area, linear and nonlinear operation. The product is used in the common emitter class-AB output stage of hand held radio equipment at 1.9 GHz, such as DECT, PHS, etc., and as a driver for DCS1800, 1900.

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BFG198 is a NPN 8GHz wideband transistor manufactured by PHILIPS company with high gain and excellent output voltage capability.

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bfg16a is a npn 2ghz wideband transistor produced by philips. it has high power gain, good thermal stability and excellent reliability. the transistor is mainly used in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes.

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BFG135 is a NPN silicon planar epitaxial transistor produced by Philips Corporation. It is packaged in SOT223 and is mainly used for wideband amplifier applications. Its small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile.

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This document describes the features and characteristics of Philips Semiconductors' BFG11 and BFG11/X models, including high power gain, high efficiency, and small size discrete power amplifiers. The product is suitable for common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

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This document describes the features and characteristics of the BFG11W/X NPN 2 GHz power transistor, including high power gain, high efficiency, and small size discrete power amplifier. It is suitable for common emitter class-AB operation at 1.9 GHz in handheld radio equipment such as DECT, PHS, and as a driver for DCS 1800.

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BFG11W/X is a NPN 2GHz power transistor produced by Philips. It has the advantages of high power gain, high efficiency, small size and so on. It is mainly used in 1.9GHz frequency band common RF scenarios such as DECT and PHS.

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This data sheet provides detailed information on Philips Semiconductors BFG11; BFG11/X NPN 2 GHz RF power transistor, including features, applications, pin definitions, performance parameters and more.

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