The 13007 silicon NPN transistor datasheet provides electrical characteristics, package details, and maximum ratings.
The 13007 is an N‑type silicon transistor offered in a TO‑220 package (typical packages KGE13007, FE13007). It is designed for high‑voltage applications with a collector‑base voltage rating of 400 V and a collector‑emitter voltage rating of 700 V.
Key electrical parameters include a maximum collector current of 8 A, power dissipation of 80 W at 25 °C, and an operating temperature range of –55 °C to 130 °C. The device also features a transition frequency of 4 MHz and a base‑collector capacitance of 110 pF. This manual is written in Chinese.
| Package Type | TO-220 |
|---|---|
| Typical Packages | KGE13007, FE13007 |
| Collector‑Base Voltage (Vcbo) | 400 V |
| Emitter‑Base Voltage (Vebo) | 9 V |
| Collector‑Emitter Voltage (Vcso) | 700 V |
| Maximum Collector Current (Ic) | 8 A |
| Power Dissipation (Pd) | 80 W |
| Operating Temperature Range | -55 °C to 130 °C |
| Transition Frequency (fT) | 4 MHz |
| Base‑Collector Capacitance (Ccb) | 110 pF |
The maximum collector current is 8 A.
The transistor can dissipate up to 80 W at 25 °C.
It is supplied in a TO‑220 package, with typical part numbers KGE13007 and FE13007.