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油基重油申子器件有限公司 13007 Silicon Transistor Datasheet
The 13007 is an N‑type silicon transistor offered in a TO‑220 package (typical packages KGE13007, FE13007). It is designed for high‑voltage applications with a collector‑base voltage rating of 400 V and a collector‑emitter voltage rating of 700 V.
Key electrical parameters include a maximum collector current of 8 A, power dissipation of 80 W at 25 °C, and an operating temperature range of –55 °C to 130 °C. The device also features a transition frequency of 4 MHz and a base‑collector capacitance of 110 pF. This manual is written in Chinese.
Covers: Package Information · Electrical Characteristics · Maximum Ratings · Typical Application
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油基重油申子器件有限公司 13007 Silicon Transistor Datasheet
Datasheet 1 pages · 24 KB · ZHThe 13007 silicon NPN transistor datasheet provides electrical characteristics, package details, and maximum ratings.
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Questions answered in 油基重油申子器件有限公司 manuals
What is the maximum collector current for the 13007 transistor?
The maximum collector current is 8 A.
What is the power dissipation rating of the 13007 transistor?
The transistor can dissipate up to 80 W at 25 °C.