Datasheet for the Vishay Siliconix Si2301CDS P-Channel 20 V MOSFET, detailing specifications, characteristics, and application information.
This document is a datasheet for the Vishay Siliconix Si2301CDS, a P-Channel 20 V (D-S) MOSFET designed for use as a load switch. The device features a TrenchFET Power MOSFET structure and is compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 for halogen-free materials.
The datasheet provides absolute maximum ratings, electrical specifications, and typical characteristics for the Si2301CDS. It includes detailed information on the SOT-23 (TO-236) package dimensions and mounting recommendations, specifically addressing the 'Little Foot' package footprint for proper thermal and electrical connections on printed circuit boards.
| Drain-Source Voltage | - 20 V |
|---|---|
| Continuous Drain Current (TJ = 150 °C) | - 3.1 A |
| Package Type | TO-236 (SOT-23) |
| Operating Junction Temperature Range | - 55 to 150 °C |
The maximum drain-source voltage is 20 V.
The maximum power dissipation is 1.6 W.