The UC Berkeley BSIM4.3.0 MOSFET Model User Manual describes the compact model's physics, parameters, and extraction methodology for sub‑100nm devices.
This manual provides a detailed description of the BSIM4.3.0 MOSFET compact model, covering effective oxide thickness, channel length/width effects, threshold voltage, charge models, and many other physical phenomena relevant to modern sub‑100nm transistors. It also includes the full list of model parameters, default values, and guidance on parameter extraction.
The document lists the development team from UC Berkeley and acknowledges contributions from industry partners. It serves as a reference for circuit designers and researchers who need to implement the BSIM4.3.0 model in simulation tools.