UC Berkeley Manuals

UC Berkeley BSIM4.3.0 MOSFET Model User Manual

This manual provides a detailed description of the BSIM4.3.0 MOSFET compact model, covering effective oxide thickness, channel length/width effects, threshold voltage, charge models, and many other physical phenomena relevant to modern sub‑100nm transistors. It also includes the full list of model parameters, default values, and guidance on parameter extraction.

The document lists the development team from UC Berkeley and acknowledges contributions from industry partners. It serves as a reference for circuit designers and researchers who need to implement the BSIM4.3.0 model in simulation tools.

Covers: Effective Oxide Thickness, Channel Length and Width · Threshold Voltage Model · Channel Charge and Subthreshold Swing Models · Gate Direct Tunneling Current Model · Drain Current Model · Body Current Models