The datasheet provides specifications, features and application information for the G2S06503A 650 V/3 A SiC Schottky power diode.
The G2S06503A SiC Schottky power diode offers a positive temperature coefficient, zero reverse recovery current, and low forward recovery voltage, making it suitable for parallel operation and reducing switching loss. It operates up to 175 °C and is packaged in a TO‑220‑2 pin case.
Key applications include switch‑mode power supplies, power‑factor correction, motor drives, photovoltaic inverters, UPS, wind‑turbine converters, railway traction and electric vehicles. The document lists rated values, thermal and electrical characteristics, and mechanical dimensions of the package. This manual is written in Chinese.
| Reverse Repetitive Peak Voltage (VRRM) | 650 V |
|---|---|
| Reverse Surge Peak Voltage (VRSM) | 650 V |
| Reverse DC Voltage (VDC) | 650 V |
| Forward Average Current (IF) | 3 A |
| Forward Repetitive Peak Current (IFRM) | 15 A |
| Forward Non‑repetitive Peak Current (IFSM) | 21 A |
| Total Power Dissipation (PTOT) at 25 °C | 53.2 W |
| Maximum Ambient Temperature (TC) | 135 °C |
| Operating Junction Temperature (Tj) Range | -55 °C to 175 °C |
| Thermal Resistance Junction‑to‑Case (RthJC) | 2.82 °C/W |
| Typical Forward Voltage Drop (VF) at IF=3 A, Tj=25 °C | 1.41 V |
| Reverse Leakage Current (IR) at VR=650 V, Tj=25 °C | 100 µA |
The diode is rated for a reverse repetitive peak voltage of 650 V.
The typical forward voltage drop is 1.41 V at 3 A and 25 °C junction temperature.
The device can operate up to a junction temperature of 175 °C.
The thermal resistance RthJC is 2.82 °C/W.