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Taike Tianrun G2S06503A SiC Schottky Power Diode Datasheet
The G2S06503A SiC Schottky power diode offers a positive temperature coefficient, zero reverse recovery current, and low forward recovery voltage, making it suitable for parallel operation and reducing switching loss. It operates up to 175 °C and is packaged in a TO‑220‑2 pin case.
Key applications include switch‑mode power supplies, power‑factor correction, motor drives, photovoltaic inverters, UPS, wind‑turbine converters, railway traction and electric vehicles. The document lists rated values, thermal and electrical characteristics, and mechanical dimensions of the package. This manual is written in Chinese.
Covers: Product Features · Product Advantages · Application Areas · Rated Values · Thermal Characteristics · Electrical Characteristics
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Taike Tianrun G2S06503A SiC Schottky Power Diode Datasheet
Datasheet 5 pages · 1.6 MB · ZHThe datasheet provides specifications, features and application information for the G2S06503A 650 V/3 A SiC Schottky power diode.
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Datasheet
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in 泰科天润 manuals
What is the maximum reverse voltage rating of the G2S06503A diode?
The diode is rated for a reverse repetitive peak voltage of 650 V.
From: Taike Tianrun G2S06503A SiC Schottky Power Diode Datasheet
What is the typical forward voltage drop at 3 A forward current?
The typical forward voltage drop is 1.41 V at 3 A and 25 °C junction temperature.
From: Taike Tianrun G2S06503A SiC Schottky Power Diode Datasheet