IBM 128Mb Synchronous DRAM Die Revision B User Manual

IBM's manual details specifications, pin assignments, operation modes, and initialization procedures for the 128Mb Synchronous DRAM devices.


IBM 128Mb Synchronous DRAM Die Revision B User Manual - cover page
Brand
IBM
Category
Memory
Document type
User Manual
Language
English
Pages
69
File format
PDF
File size
1 MB
Published
05 October, 2026
Updated
05 October, 2026
MD5 checksum
711B09A58A0B6265CB8F76A337EB8004

About this manual

The document describes the IBM 128Mb Synchronous DRAM family (part numbers IBM0312164, IBM0312804, IBM0312404, IBM03124B4). It covers features such as high‑performance single‑pulsed RAS interface, programmable CAS latency and burst length, and power‑down modes. Pin assignments, functional descriptions, and block diagrams for both planar and stacked packages are provided.

Operational details include the power‑on and initialization sequence, mode register programming, burst‑mode operation, and ordering information. Package dimensions and revision history are also listed, along with legal notices and IBM contact information.

What's inside

  • Features
  • Pin Assignments
  • Pin Description
  • Ordering Information
  • Block Diagram
  • Power On and Initialization
  • Mode Register Operation
  • Burst Mode Operation
  • Package Dimensions
  • Revision Log

Specifications

Clock Frequency133 MHz
CAS Latency2 or 3 cycles
Burst Length1, 2, 4, or 8
Power Supply Voltage3.3 V ±0.3 V
Package Type54‑pin 400 mil TSOP‑Type II
Refresh Cycles4096 cycles per 64 ms

Frequently asked questions

What supply voltage is required for the DRAM?

The device operates from a single 3.3 V ±0.3 V power supply.

How many refresh cycles are performed in 64 ms?

The DRAM performs 4096 refresh cycles every 64 ms.

What are the possible CAS latency settings?

CAS latency can be programmed to either 2 or 3 clock cycles.

What burst lengths can be programmed?

Burst length can be set to 1, 2, 4, or 8.

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