SM3GZ47,SM3JZ47 is a bilateral silicon planar thyristor produced by Toshiba. It has a peak repetitive off voltage of 400V, 600V, a RMS on current of 3A, a maximum gate trigger current of 20mA, a 10V/μs turn-on time rate, and a 1500V AC 60 second insulation resistance.
This document provides the electrical and mechanical specifications for Toshiba's SM3GZ47 and SM3JZ47 silicon‑controlled rectifier (SCR) devices. It includes product identification, rating information, and safety notes intended for designers of electronic equipment.
Key data such as peak repetitive off voltage, gate trigger current, RMS on‑current, and operating temperature range are listed, along with UL certification details and handling precautions for reliable use in various applications. This manual is written in Japanese.
| Peak repetitive off voltage (VpDRM) | 400 V, 600 V |
|---|---|
| Gate trigger current (Iam) | 20 mA (Max) |
| Holding voltage (VTsol) | 1500 V |
| Operating temperature range | -40 °C to 125 °C |
| UL certification | UL No. 87989 |
The maximum gate trigger current is 20 mA.
The devices are rated for a peak repetitive off voltage of 400 V (or 600 V).
Yes, it is UL certified (UL No. 87989).
It can operate from –40 °C to 125 °C.