RN1607～RN1609 are a pair of bias-resistor embedded bipolar junction transistors from Toshiba. They are suitable for switching, inverter, interface and driver circuits.
The RN1607‑RN1609 series are silicon NPN epitaxial transistors (PCT type) that incorporate bias resistors within the device. This integration reduces component count, enables smaller equipment, and simplifies assembly for switching, inverter, interface, and driver circuits.
The datasheet provides maximum ratings, electrical characteristics, and package information. Key parameters include collector‑base voltage of 50 V, collector‑emitter voltage of 50 V, collector current up to 100 mA, power dissipation of 300 mW, and operating temperature up to 150 °C. Various resistance values are offered to suit diverse circuit designs. This manual is written in Japanese.