This document provides the electrical characteristics, maximum ratings, and package information for the Toshiba 2SC2216 and 2SC2717 silicon NPN epitaxial planar transistors. It includes typical application circuits such as a 45 MHz power gain measurement setup.
The data sheet also contains handling precautions and notes on the intended use of these semiconductors in general electronic equipment, while warning against use in safety‑critical applications. This manual is written in Japanese.
| Collector Current (Ic) | 50 mA |
|---|---|
| Power Dissipation (Pc) | 300 mW |
| Operating Temperature Range | -55 °C to 125 °C |
The maximum collector current is 50 mA.
The collector‑base voltage rating is 30 V.